2N5401RA Fairchild Semiconductor, 2N5401RA Datasheet - Page 2

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2N5401RA

Manufacturer Part Number
2N5401RA
Description
PNP General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
V
V
V
I
I
h
V
V
f
C
NF
ON CHARACTERISTICS*
Symbol
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
CBO
EBO
T
FE
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
obo
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
Electrical Characteristics
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 1.0 MHz
I
R
f = 10 Hz to 15.7 kHz
C
C
E
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
S
= 1.0 mA, I
= 100 A, I
= 10 A, I
= 1.0 mA, V
= 10 mA, V
= 50 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 10 mA, V
= 250 A, V
= 1.0 k ,
= 120 V, I
= 120 V, I
= 3.0 V, I
= 10 V, I
Test Conditions
C
B
B
B
B
E
B
C
E
CE
CE
CE
E
E
= 0
CE
= 1.0 mA
= 5.0 mA
= 1.0 mA
= 5.0 mA
= 0,
CE
= 0
= 0
= 0
= 0
= 0, T
= 5.0 V
= 5.0 V
= 10 V,
= 5.0 V
PNP General Purpose Amplifier
= 5.0 V,
A
= 100 C
Min
150
160
100
5.0
50
60
50
Max
240
300
0.2
0.5
1.0
1.0
6.0
8.0
50
50
50
(continued)
Units
MHz
nA
nA
pF
dB
V
V
V
V
V
V
V
A
3

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