KSC5338F Fairchild Semiconductor, KSC5338F Datasheet

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KSC5338F

Manufacturer Part Number
KSC5338F
Description
NPN Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
High Voltage Power Switch Switching
Application
• High Speed Switching
• Wide SOA
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width=5ms, Duty Cycle 10%
I
I
BV
h
f
V
V
V
I
I
P
T
T
BV
BV
I
I
h
V
V
C
C
t
t
t
B
BP
T
C
CP
CBO
EBO
ON
STG
F
Symbol
FE2
FE1
J
STG
CBO
CEO
EBO
C
CE
BE
ob
ib
Symbol
EBO
CBO
CEO
(sat)
(sat)
* DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSC5338F
I
I
I
V
V
V
V
I
I
I
I
V
V
V
V
I
R
C
C
C
C
C
C
C
B1
CB
EB
CE
CE
CB
EB
CE
CC
L
=1mA, I
= 1mA, I
= 5mA, I
= 1A, I
= 2A, I
= 1A, I
= 2A, I
=125
= 0.2A, I
=8V, I
= 9V, I
= 800V, V
= 5V, I
= 1V, I
= 10V, f =1MHz
= 10V, I
= 125V, I
Test Condition
B
B
B
B
E
C
C
= 0.1A
= 0.4A
= 0.1A
= 0.4A
E
B
=0
C
C
=0, f =1MHz
B2
C
= 0
=0
= 0
= 0.5A
= 2A
C
= 0.1A
BE
= -0.2A
= 1A
= 0
1
1.Base
1000
Min.
450
15
9
6
- 65 ~ 150
2.Collector
Value
1000
450
150
10
40
9
5
2
4
1000
Typ.
0.55
TO-220F
70
14
Max.
1.25
3.Emitter
200
500
30
0.8
0.5
1.1
10
10
2
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
A
A
MHz
C
C
pF
pF
ns
ns
V
V
V
V
V
V
V
A
A
s

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KSC5338F Summary of contents

Page 1

... Input Capacitance ib f Current Gain Bandwidth Product T t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse Test: Pulse Width=5ms, Duty Cycle 10% ©2000 Fairchild Semiconductor International KSC5338F T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2000 Fairchild Semiconductor International 100 I =900mA 800mA 700mA 600mA 500mA 400mA 300mA ...

Page 3

... Typical Characteristics 100 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Safe Operating Area ©2000 Fairchild Semiconductor International (Continued =150℃ 1ms 40 5ms 20 0 1000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating Rev. A, February 2000 ...

Page 4

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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