KSC5338F Fairchild Semiconductor, KSC5338F Datasheet
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Manufacturer Part Number
KSC5338F
Description
NPN Silicon Transistor
Manufacturer
Fairchild Semiconductor
©2000 Fairchild Semiconductor International
High Voltage Power Switch Switching
Application
• High Speed Switching
• Wide SOA
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width=5ms, Duty Cycle 10%
I
I
BV
h
f
V
V
V
I
I
P
T
T
BV
BV
I
I
h
V
V
C
C
t
t
t
B
BP
T
C
CP
CBO
EBO
ON
STG
F
Symbol
FE2
FE1
J
STG
CBO
CEO
EBO
C
CE
BE
ob
ib
Symbol
EBO
CBO
CEO
(sat)
(sat)
* DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSC5338F
I
I
I
V
V
V
V
I
I
I
I
V
V
V
V
I
R
C
C
C
C
C
C
C
B1
CB
EB
CE
CE
CB
EB
CE
CC
L
=1mA, I
= 1mA, I
= 5mA, I
= 1A, I
= 2A, I
= 1A, I
= 2A, I
=125
= 0.2A, I
=8V, I
= 9V, I
= 800V, V
= 5V, I
= 1V, I
= 10V, f =1MHz
= 10V, I
= 125V, I
Test Condition
B
B
B
B
E
C
C
= 0.1A
= 0.4A
= 0.1A
= 0.4A
E
B
=0
C
C
=0, f =1MHz
B2
C
= 0
=0
= 0
= 0.5A
= 2A
C
= 0.1A
BE
= -0.2A
= 1A
= 0
1
1.Base
1000
Min.
450
15
9
6
- 65 ~ 150
2.Collector
Value
1000
450
150
10
40
9
5
2
4
1000
Typ.
0.55
TO-220F
70
14
Max.
1.25
3.Emitter
200
500
30
0.8
0.5
1.1
10
10
2
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
A
A
MHz
C
C
pF
pF
ns
ns
V
V
V
V
V
V
V
A
A
s
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KSC5338F Summary of contents
... Input Capacitance ib f Current Gain Bandwidth Product T t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse Test: Pulse Width=5ms, Duty Cycle 10% ©2000 Fairchild Semiconductor International KSC5338F T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA ...
... I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2000 Fairchild Semiconductor International 100 I =900mA 800mA 700mA 600mA 500mA 400mA 300mA ...
... Typical Characteristics 100 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Safe Operating Area ©2000 Fairchild Semiconductor International (Continued =150℃ 1ms 40 5ms 20 0 1000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating Rev. A, February 2000 ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...
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