2SK1957 Hitachi Semiconductor, 2SK1957 Datasheet - Page 4

• Manufacturer Part Number: 2SK1957
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1957
4
60
40
20
0
10
8
6
4
2
0
Power vs. Temperature Derating
10 V
Drain to Source Voltage V
Case Temperature Tc (°C)
Typical Output Characteristics
4
6 V
50
8
V
4 V
GS
12
100
5 V
Pulse Test
= 3.5 V
5.5 V
4.5 V
16
DS
(V)
150
20
0.05
0.3
0.1
50
30
10
10
3
1
8
6
4
2
0
1
Drain to Source Voltage V
Tc = 25°C
Gate to Source Voltage V
Maximum Safe Operation Area
Ta = 25 °C
Typical Transfer Characteristics
Pulse Test
V
3
DS
75°C
2
= 10 V
10
4
30
6
100
–25°C
GS
DS
300 1000
8
(V)
(V)
10