2SK1957 Hitachi Semiconductor, 2SK1957 Datasheet - Page 6

• Manufacturer Part Number: 2SK1957
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1957
6
500
200
100
500
400
300
200
100
50
20
10
5
0.2
0
V
V
Reverse Drain Current I
Body to Drain Diode Reverse
DS
Dynamic Input Characteristics
DD
di/dt = 100 A/ s, V
Ta = 25 C
0.5
= 150 V
8
Gate Charge Qg (nc)
100 V
50 V
Recovery Time
1
V
16
DD
V
2
GS
= 150 V
100 V
24
50 V
GS
I = 7 A
D
5
= 0
DR
32
10
(A)
20
40
20
16
12
8
4
0
1000
500
200
100
100
50
20
10
10
5
1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
t (on)
GS
0.2
d
vs. Drain to Source Voltage
Switching Characteristics
10
= 0
t
Drain Current I
Typical Capacitance
f
V
PW = 2 s, duty
GS
0.5
20
= 10 V, V
1
t
r
t (off)
d
30
2
DD
D
Ciss
Coss
Crss
(A)
< =
=
:
1%
40
DS
30 V
5
(V)
10
50