2SJ545 Hitachi Semiconductor, 2SJ545 Datasheet

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2SJ545

Manufacturer Part Number
2SJ545
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ545
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current
4 V gete drive devices
High speed switching
DS(on)
= 0.11
typ.
G
High Speed Power Switching
Silicon P Channel MOS FET
TO–220CFM
D
S
2SJ545
1
2
3
1. Gate
2. Drain
3. Source
ADE-208-643A (Z)
2nd. Edition
Jun 1998

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2SJ545 Summary of contents

Page 1

... Features Low on-resistance R = 0.11 typ. DS(on) Low drive current 4 V gete drive devices High speed switching Outline G 2SJ545 Silicon P Channel MOS FET High Speed Power Switching TO–220CFM ADE-208-643A ( Gate 2. Drain 3. Source 2nd. Edition Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Maximum Safe Operation Area Operation in this area is limited by R DS(on °C –1 –3 –10 –30 –100 Drain to Source Voltage V DS Typical Transfer Characteristics V = – Pulse Test °C 25 °C –25 °C –1 –2 –3 –4 Gate to Source Voltage V (V) GS 2SJ545 (V) –5 3 ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –0.8 –0.6 –0.4 –0.2 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0 –4 V 0.2 GS 0.1 – – Case Temperature 4 Static Drain to Source on State Resistance 1 Pulse Test ...

Page 5

... DR Drain to Source Voltage V 0 1000 = – 300 –4 100 –8 30 –12 10 –16 3 – –0.1 –0.2 2SJ545 Typical Capacitance vs. Drain to Source Voltage MHz Ciss Crss Coss –10 –20 –30 –40 –50 (V) DS Switching Characteristics V = – –30 V ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –10 –8 –6 –10 V –4 –5 V –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – Pulse Test 0 –1.6 –2 ( Monitor D ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U. Vin 50 = –30 V – – c( (t) • ch – 5.0°C/ 25° Pulse Width PW (S) Vout Vin Monitor 10% DD Vout td(on) 2SJ545 Tc = 25°C ch – 100 m 1 Waveform 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 10.0 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 0.6 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 8 2.7 ± 0.2 3.2 ± 0.2 4.5 ± 0.3 2.5 ± 0.2 0.7 ± 0.1 Unit: mm Hitachi Code TO–220CFM — EIAJ JEDEC — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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