2SJ545 Hitachi Semiconductor, 2SJ545 Datasheet - Page 3

• Manufacturer Part Number: 2SJ545
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–10
–8
–6
–4
–2
40
30
20
10
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–2
50
–10 V
–4 V
–5 V
–4
100
V
GS
–6
= –2 V
Pulse Test
–2.5 V
–3.5 V
150
Tc (°C)
V
–3 V
DS
–8
(V)
–10
200
–100
–0.2
–0.5
–0.1
–10
–50
–10
–20
–8
–6
–4
–2
–5
–2
–1
–0.1 –0.3
0
V
Pulse Test
Gate to Source Voltage
Drain to Source Voltage
Ta = 25 °C
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
Operation in
this area is
limited by R
–1
= –10 V
Tc = 75 °C
–1
–2
DS(on)
–3
–3
–10
25 °C
–25 °C
V
V
GS
–4
DS
–30 –100
(V)
(V)
2SJ545
–5
3