2SJ545 Hitachi Semiconductor, 2SJ545 Datasheet - Page 4

• Manufacturer Part Number: 2SJ545
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ545
4
–1.0
–0.8
–0.6
–0.4
–0.2
0.5
0.4
0.3
0.2
0.1
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
GS
Case Temperature
–10 V
–4
0
Gate to Source Voltage
= –4 V
vs. Temperature
–8
40
–12
I
80
D
I
= –5 A
Tc
D
Pulse Test
= –5 A
V
–5 A
–16
120
–1, –2 A
–1 A
GS
–2 A
(°C)
–1 A
–2 A
(V)
160
–20
0.05
0.02
0.01
0.2
0.5
0.1
0.5
0.1
20
10
Static Drain to Source on State Resistance
–0.1
1
5
2
1
–0.1
Forward Transfer Admittance vs.
–0.2
–0.3
Drain Current I
Drain Current
V
GS
vs. Drain Current
Ta = –25 °C
–0.5
–1
Drain Current
= –4 V
–10 V
–3
–1
75 °C
–2
–10
I
D
V
Pulse Test
D
Pulse Test
DS
(A)
(A)
25 °C
= –10 V
–30
–5
–100
–10