2SJ545 Hitachi Semiconductor, 2SJ545 Datasheet - Page 5

• Manufacturer Part Number: 2SJ545
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

–100
500
200
100
–20
–40
–60
–80
50
20
10
–0.1 –0.2
5
0
0
V
Reverse Drain Current
V
Dynamic Input Characteristics
DD
DS
Body–Drain Diode Reverse
8
= –50 V
Gate Charge
V
–25 V
–10 V
–0.5
DD
Recovery Time
= –10 V
16
–25 V
–50 V
di / dt = 50 A / µs
V
GS
–1
V
= 0, Ta = 25 °C
24
GS
–2
Qg (nc)
I
D
I
DR
= –10 A
32
–5
(A)
–10
40
0
–4
–8
–12
–16
–20
1000
2000
1000
500
200
100
300
100
50
20
10
30
10
–0.1 –0.2
3
1
0
Drain to Source Voltage V
–10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
V
Pw = 5 µs, duty < 1 %
–0.5 –1
GS
–20
= –10 V, V
r t
t
d(off)
t f
Ciss
Coss
Crss
–30
–2
t
I
d(on)
D
DD
V
f = 1 MHz
–40
(A)
GS
= –30 V
DS
–5
= 0
(V)
2SJ545
–50
–10
5