IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet - Page 3

• Manufacturer Part Number: IPD03N03LB
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.11
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=45 A, R
=25 °C
F
page 3
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=90 A,
=I
D
=2.7
GS
GS
=45 A,
=15 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3900
1400
0.92
typ.
180
6.2
6.3
7.9
3.1
13
41
12
14
30
27
31
9
-
-
-
IPD03N03LB G
max.
5200
1900
270
420
8.3
1.2
19
14
61
16
12
20
40
35
42
90
10
9
-
2004-12-16
Unit
pF
ns
nC
V
nC
A
V
nC