IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet - Page 6

• Manufacturer Part Number: IPD03N03LB
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.11
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10000
1000
100
DS
=f(T
7
6
5
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=60 A; V
5
20
10
GS
98 %
V
=10 V
T
Coss
Ciss
DS
j
Crss
15
60
[°C]
[V]
typ
100
20
140
25
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
=V
175 °C
0.5
DS
20
70 µA
V
T
25 °C
SD
j
1.0
60
[°C]
[V]
700 µA
100
IPD03N03LB G
1.5
25 °C, 98%
140
175 °C, 98%
2004-12-16
180
2.0