IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet - Page 7

• Manufacturer Part Number: IPD03N03LB
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.11
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
38
36
34
32
30
28
26
24
22
20
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
20
t
T
AV
j
60
150 °C
[°C]
[µs]
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=45 A pulsed
g s
20
Q
Q
gate
g
Q
40
sw
[nC]
Q
5 V
g d
IPD03N03LB G
60
15 V
20 V
2004-12-16
Q
gate
80