IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet - Page 4

• Manufacturer Part Number: IPD03N03LB
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.11
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
120
100
100
80
60
40
20
10
DS
0
1
C
0.1
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
1 ms
10 ms
10 µs
10
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
100
=f(t
0.1
80
60
40
20
10
C
0
1
); V
10
p
0
0
)
-6
0.5
0.2
0.05
0.02
0.01
0.1
GS
≥10 V
10
p
0
/T
-5
single pulse
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPD03N03LB G
0
-2
150
10
2004-12-16
0
-1
200
10
1
0