IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet - Page 5

• Manufacturer Part Number: IPD03N03LB
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.11
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
10 V
DS
GS
j
|>2|I
1
4.5 V
D
|R
1
DS(on)max
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
2.8 V
4
3.5 V
3.8 V
3.2 V
3 V
4.1 V
3
5
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
180
160
140
120
100
12
10
80
60
40
20
8
6
4
2
0
D
=f(I
0
); T
0
0
D
j
); T
=25 °C
3 V
GS
j
=25 °C
20
20
3.2 V
40
40
I
I
D
D
[A]
[A]
60
60
IPD03N03LB G
3.5 V
80
4.5 V
80
2004-12-16
3.8 V
4.1 V
10 V
100
100