psmn2r0-60bs NXP Semiconductors, psmn2r0-60bs Datasheet
psmn2r0-60bs
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psmn2r0-60bs Summary of contents
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... PSMN2R0-60BS N-channel 60 V 2.0 mΩ standard level MOSFET in D2PAK Rev. 01 — 17 January 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Unclamped avalanche energy R GS Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Min = Figure 14 °C; - j(init) ≤ ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Min - = 20 kΩ -20 Figure 1 - [1] Figure °C; see Figure ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R0-60BS Objective data sheet N-channel 60 V 2.0 mΩ standard level MOSFET in D2PAK Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-60BS Objective data sheet N-channel 60 V 2.0 mΩ standard level MOSFET in D2PAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Min Typ Max - 0.22 0. 003aaf752 tp δ = ...
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... Figure 0.4 Ω 4.7 Ω G(ext 0.4 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Min Typ Max = -55 ° ° 4 °C - ...
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... 120 0 I (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Min Typ = 25 °C; - 0 003aaf743 = 175 ° ° ...
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... GS 10 − (V) DS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Input and reverse transfer capacitances as a function of gate-source voltage, typical values min typ max 0 ...
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... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003aaf747 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS 003aaf751 4.8 V (V) = 4.5 GS 5.0 5.5 20 100 ...
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... Fig 16. Input, output and reverse transfer capacitances 200 I S (A) 160 120 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS function of drain-source voltage; typical values 003aaf750 = 25 ° C ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R0-60BS v.1 20110117 PSMN2R0-60BS Objective data sheet N-channel 60 V 2.0 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 January 2011 PSMN2R0-60BS Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 January 2011 Document identifier: PSMN2R0-60BS ...