PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet

PSMN2R0-30BL,118

Manufacturer Part Number

PSMN2R0-30BL,118

Description

MOSFET Std N-chanMOSFET

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN2R0-30BL118.pdf (15 pages)

Specifications of PSMN2R0-30BL,118

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

2.1 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

D2PAK

Minimum Operating Temperature

- 55 C

Power Dissipation

211 W

Factory Pack Quantity

800

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1. Product profile

Table 1.

[1]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

Continuous current is limited by package.

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive drain-source

avalanche energy

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.



PSMN2R0-30BL

N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK

Rev. 1 — 20 March 2012

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Conditions

see

sup

≥ 25 °C; T

Figure

Figure 11

Figure

= 25 °C; V

= 25 °C; see

= 10 V; I

= 4.5 V; I

= 10 V; T

≤ 30 V; R

12; see

13; see

≤ 175 °C

j(init)

= 25 A; T

= 25 A; V

= 50 Ω; unclamped

Figure 2

= 10 V; see

= 25 °C; I

Figure 11

Figure 14

= 100 °C;

= 25 °C;

= 15 V;

= 100 A;

Figure 1



Suitable for logic level gate drive

sources

Motor control

Server power supplies

[1]

Min

-55

Product data sheet

Typ

2.51

1.79

175

Max

100

211

2.9

2.1

555

Unit

°C

mΩ

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PSMN2R0-30BL,118 Summary of contents

Page 1

... PSMN2R0-30BL N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK Rev. 1 — 20 March 2012 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN2R0-30BL All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2012. All rights reserved. ...

Page 3

... GS 003aad248 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - Figure -55 - 100 A ...

Page 4

... PSMN2R0-30BL Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK Limit DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL = 10 μ 100 μ 100 (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 5

... Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK Conditions see Figure 4 maximum foot print; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL Min Typ Max - 0.41 0. 003aad247 δ = ...

Page 6

... V; see Figure D DS see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL Min Typ Max 1.3 1.7 2.15 0 2. ...

Page 7

... 003aad249 V ( (V) DS Fig 6. 003aad257 75 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL Min Typ = 25 ° 100 175 ° ° ...

Page 8

... GS Fig 10. Gate-source threshold voltage as a function of 003aad250 3 (V) = 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL (th) (V) max 2 typ min junction temperature 2 a 1.5 1 ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aad253 C iss (A) C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL ( 15V charge; typical values 100 ...

Page 10

... Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN2R0-30BL Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK 003aad252 0 2.5 5 7.5 V All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL C iss C rss 10 (V) GS © NXP B.V. 2012. All rights reserved ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN2R0-30BL v.1 20120320 PSMN2R0-30BL Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R0-30BL © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 March 2012 Document identifier: PSMN2R0-30BL ...

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