PSMN2R0-30YL_10 NXP [NXP Semiconductors], PSMN2R0-30YL_10 Datasheet
PSMN2R0-30YL_10
Related parts for PSMN2R0-30YL_10
PSMN2R0-30YL_10 Summary of contents
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... PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 7 January 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ...
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... ° 100 j(init Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT669 Min Max - ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature = All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET 03aa16 50 100 150 200 T (°C) mb 003aac529 10 μs 100 μs ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-30YL_3 Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET Min Typ Max - 0.4 1.28 003aac481 δ = ...
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... MHz see Figure 16 = 0.5 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET Min Typ Max Figure 11 1.3 1.7 2.15 0. ...
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... GS Fig 6. 003aac475 160 g fs (S) 140 120 100 100 150 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET Min Typ Max Figure 17 - 0.78 1 003aac474 ( 2.8 2.6 0 ...
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... V (V) 3 -60 GS Fig 12. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET 003aac476 (V) GS 003a a c337 max typ min 0 ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET GS(pl) V GS(th GS1 ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN2R0-30YL_3 Product data sheet 100 150 ° 0.0 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET 003aac469 25 °C 1.0 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D E max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 ...
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... Data sheet status Change notice Product data sheet - Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET Supersedes PSMN2R0-30YL_2 PSMN2R0-30YL_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 January 2010 PSMN2R0-30YL N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN2R0-30YL_3 All rights reserved. Date of release: 7 January 2010 ...