PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet

PSMN2R0-60ES,127

Manufacturer Part Number

PSMN2R0-60ES,127

Description

MOSFET Power N-Ch 60V 2.2 mOhms

Manufacturer

NXP Semiconductors

Series

-r

Datasheet

1.PSMN2R0-60ES127.pdf (15 pages)

Specifications of PSMN2R0-60ES,127

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.2 mOhms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

120 A

Power Dissipation

338 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

I2PAK

Gate Charge Qg

137 nC

Minimum Operating Temperature

- 55 C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.2 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

137nC @ 10V

Input Capacitance (ciss) @ Vds

9997pF @ 30V

Power - Max

338W

Mounting Type

Through Hole

Lead Free Status / Rohs Status

Details

Other names

934065162127

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

Table 1.

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN2R0-60ES

N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK

Rev. 02 — 19 April 2011

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive

drain-source avalanche

energy

Conditions

see

≥ 25 °C; T

= 25 °C; see

= 100 °C; see

= 120 A; V

Figure 1

Figure 13

Figure 15

= 25 °C; V

= 25 °C; see

= 30 V; see

= 10 V; I

= 10 V; T

= 50 Ω; Unclamped

sup

≤ 175 °C

j(init)

= 25 A;

= 75 A;

Figure 12

Figure

≤ 60 V;

Figure

Suitable for standard level gate drive

sources

Motor control

Server power supplies

Figure 2

= 10 V;

= 25 °C;

14;

12;

[1]

[2]

Min

-55

Product data sheet

Typ

1.8

137

Max Unit

120

338

175

2.2

3.5

913

°C

mΩ

Related parts for PSMN2R0-60ES,127

PSMN2R0-60ES,127 Summary of contents

Page 1

... PSMN2R0-60ES N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Graphic symbol mbb076 Version SOT226 © NXP B.V. 2011. All rights reserved ...

Page 3

... Unclamped V sup GS 003aaf754 120 P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 - 120 A ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK D 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES 003aaf753 =10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max - 0.22 0. 003aaf752 tp δ ...

Page 6

... DS GS see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.4 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max 4 0. 500 = 25 ° 100 - - 100 [1] - 1.8 2 ...

Page 7

... A; dI /dt = -100 A/µ 003aaf742 ( 120 0 I (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max Unit - 0.8 1 003aaf743 = 175 ° ° (V) GS © ...

Page 8

... V ( −60 1 (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Input and reverse transfer capacitances as a function of gate-source voltage, typical values max typ min 0 60 120 junction temperature © NXP B.V. 2011. All rights reserved. ...

Page 9

... V (V) GS Fig 12. Drain-source on-state resistance as a function 003aaf747 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES 10 DSon 8 4.8 V ( 100 of drain current; typical values V DS ...

Page 10

... Q (nC) G Fig 16. Input, output and reverse transfer capacitances 200 I S (A) 160 120 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES function of drain-source voltage; typical values 003aaf750 = 25 ° 0.9 1.2 V (V) ...

Page 11

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R0-60ES v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN2R0-60ES v.1 20110117 PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Data sheet status ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN2R0-60ES ...

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