PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R0-60ES,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065162127

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 3.
(A)
I
D
10
10
10
10
10
-1
4
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
1
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
10
PSMN2R0-60ES
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
003aaf753
1 ms
DC
t
100 μ s
10 ms
100 ms
p
=10 μ s
10
2
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