fdb6644 Fairchild Semiconductor, fdb6644 Datasheet
fdb6644
Available stocks
Related parts for fdb6644
fdb6644 Summary of contents
Page 1
... R Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA Package Marking and Ordering Information Device Marking Device FDB6644 FDB6644 FDP6644 FDP6644 2001 Fairchild Semiconductor Corporation Features been designed Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely ...
Page 2
Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings W Single Pulse Drain-Source DSS Avalanche Energy I Maximum Drain-Source Avalanche AR Current Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain ...
Page 3
Typical Characteristics 10V GS 4.5V 3. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2.2 I =25A D 1 10V GS 1.4 1 0.6 0.2 ...
Page 4
Typical Characteristics 25A GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1000 R LIMIT 100 DS(ON) 10ms 100ms 10V 10 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...