mrf7s21170h

Manufacturer Part Numbermrf7s21170h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf7s21170h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
1400 mA, P
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Peak Tuned Output Power
• P
@ 1 dB Compression Point w 170 Watts CW
out
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S21170H
MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V
= 28 Volts, I
=
DD
DQ
CASE 465B - 03, STYLE 1
MRF7S21170HR3
CASE 465C - 02, STYLE 1
MRF7S21170HSR3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Symbol
R
θJC
MRF7S21170HR3 MRF7S21170HSR3
Rev. 4, 5/2007
MRF7S21170HR3
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880
NI - 880S
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
°C
150
°C
225
°C
(2,3)
Value
Unit
°C/W
0.31
0.36
1

mrf7s21170h Summary of contents

  • Page 1

    ... MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21170H MRF7S21170HSR3 2110 - 2170 MHz AVG Volts ...

  • Page 2

    ... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S21170HR3 MRF7S21170HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

  • Page 3

    ... Delay = 170 W CW ΔΦ out ΔG ΔP1dB Min Typ Max = 1400 mA, 2110 - 2170 MHz Bandwidth — 25 — — 0.4 — — 1.95 — — 1.7 — — 18 — — 0.015 — — 0.01 — MRF7S21170HR3 MRF7S21170HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

  • Page 4

    ... Z8 0.119″ x 0.787″ Microstrip Z9 0.077″ x 0.880″ Microstrip Z10 0.459″ x 1.000″ Microstrip Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values Part C1 100 pF Chip Capacitor C2, C3, C7, C8, C17, C18 6.8 pF Chip Capacitors C4, C15 0.3 pF Chip Capacitors C5 0 ...

  • Page 5

    ... Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...

  • Page 6

    ... Vdc 2135 MHz 2145 MHz DD Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S21170HR3 MRF7S21170HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1400 mA DD out DQ Single −Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7 ...

  • Page 7

    ... TWO −TONE SPACING (MHz) versus Tone Spacing 54 Ideal Actual 24 18 120 −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 1400 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21170HR3 MRF7S21170HSR3 100 400 7 ...

  • Page 8

    ... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S21170HR3 MRF7S21170HSR3 8 TYPICAL CHARACTERISTICS 1400 2140 MHz ...

  • Page 9

    ... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Z source f = 2060 MHz Output Matching Network MRF7S21170HR3 MRF7S21170HSR3 9 ...

  • Page 10

    ... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω P3dB 4.43 - j11.85 Figure 17. Pulsed CW Output Power versus Input Power MRF7S21170HR3 MRF7S21170HSR3 10 62 Ideal P3dB = 54.65 dBm (290 P1dB = 53.54 dBm 55 (226 W) ...

  • Page 11

    ... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF7S21170HR3 MRF7S21170HSR3 11 ...

  • Page 12

    ... Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, updated to include output power level at functional test MRF7S21170HR3 MRF7S21170HSR3 12 PRODUCT DOCUMENTATION REVISION HISTORY Description to On Characteristics table, p ...

  • Page 13

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S21170H Rev. 4, 5/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...