mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 7

• Manufacturer Part Number: mrf7s21170h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−20
−30
−40
−50
−60
−70
40
1
Figure 10. Digital Predistortion Correction versus
Figure 7. Intermodulation Distortion Products
V
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
V
Single −Carrier W−CDMA, PAR = 7.5 dB, ACPR @
"5 MHz Offset in 3.84 MHz Integrated Bandwidth
DD
DPD Corrected
No Memory Correction
DD
41
= 28 Vdc, I
= 28 Vdc, I
42
P
Uncorrected, Upper and Lower
out
DQ
DQ
ACPR and Output Power
, OUTPUT POWER (WATTS) PEP
versus Output Power
P
43
out
= 1400 mA
= 1400 mA, f = 2140 MHz
, OUTPUT POWER (dBm)
10
44
DPD Corrected, with Memory Correction
5th Order
3rd Order
45
−1
−2
−3
−4
−5
1
0
7th Order
20
46
−1 dB = 43.335 W
Compression (PARC) versus Output Power
Figure 9. Output Peak - to - Average Ratio
47
−2 dB = 61.884 W
100
TYPICAL CHARACTERISTICS
40
48
P
out
49
, OUTPUT POWER (WATTS)
400
60
50
−3 dB = 83.111 W
V
f = 2140 MHz, Input PAR = 7.5 dB
DD
= 28 Vdc, I
19
18
17
16
15
14
13
80
1
−10
−20
−30
−40
−50
−60
Figure 11. Power Gain and Drain Efficiency
0
G
η
DQ
1
ps
D
= 1400 mA
Figure 8. Intermodulation Distortion Products
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
IM5 −L
100
= 28 Vdc, P
P
versus CW Output Power
out
T
IM5 −U
, OUTPUT POWER (WATTS) CW
C
Actual
Ideal
= −30_C
IM7 −U
25_C
versus Tone Spacing
85_C
out
TWO −TONE SPACING (MHz)
120
10
MRF7S21170HR3 MRF7S21170HSR3
= 170 W (PEP), I
54
48
42
36
30
24
18
IM7 −L
V
I
f = 2140 MHz
10
DQ
IM3 −U
IM3 −L
DD
= 1400 mA
= 28 Vdc
DQ
= 1400 mA
100
−30_C
85_C
25_C
400
60
50
40
30
20
10
0
100
7