tc1301vp0912 Transcom, Inc., tc1301vp0912 Datasheet - Page 2

• Manufacturer Part Number: tc1301vp0912
• Description: Low Noise And Medium Power Gaas Fets
• Manufacturer: Transcom, Inc.

ABSOLUTE MAXIMUM RATINGS (T
CHIP DIMENSIONS
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290℃ ± 5℃ ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond
Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC.,
Web-Site:
Symbol
T
V
V
T
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
www.transcominc.com.tw
S
D
Continuous Dissipation
G
Drain-Source Voltage
Channel Temperature
RF Input Power, CW
Gate-Source Voltage
Storage Temperature
90 Dasoong 7
Drain Current
Gate Current
Parameter
S
4 3 0
th
G
D
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
!
1 2
- 65
S
800 mW
600 A
24 dBm
C
Rating
175
-3.0 V
Phone: [phone]
7.0 V
I
to +175
DSS
A
=25 C)
C
G
D
C
2 / 2
S
2 9 0
!
1 2
Fax: [phone]
Source Pad: 75 x 80
Units: Micrometers
Chip Thickness: 50
Drain Pad: 80 x 70
Gate Pad: 75 x 70
TC1301V
REV5_20070502