is43lr32200b-6bl Integrated Silicon Solution, Inc., is43lr32200b-6bl Datasheet - Page 27

• Manufacturer Part Number: is43lr32200b-6bl
• Description: 512k X 32bits X 4banks Mobile Ddr Sdram
• Manufacturer: Integrated Silicon Solution, Inc.

Rev. 00A | Feb. 2011
Read
the starting column location.
precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent access. The valid data-
out elements will be available CAS latency after the READ command is issued.
out element is coincident with the read postamble. DQS is edge-aligned with read data. Upon completion of a burst, assuming no new READ
commands have been initiated, the I/O's will go high-Z.
Figure12 : Read command
Figure13 : Read Data out timing (BL=4)
The READ command is used to initiate a Burst Read to an active row. The value of BA0 and BA1 selects the bank and address inputs select
The value of A10 determines whether or not auto-precharge is used. If auto-precharge is selected, the row being accessed will be
The Mobile DDR drives the DQS during read operations. The initial low state of the DQS is known as the read preamble and the last data-
Notes:
1. BL=4
2. Shown with nominal tAC, tDQSCK and tDQSQ
Command
Address
DQS
DQS
/CLK
DQ
DQ
CLK
Bank a
COL n
READ
T0
Don’t care
BA0, BA 1
A0~A7
CL=2
/RAS
/CAS
/CLK
CKE
/WE
CLK
A10
/CS
NOP
T1
tRPRE
tAC
CL=3
T1n
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CA
BA
D
OUT
n
NOP
T2
tRPRE
tLZ
tAC
D
n+1
OUT
T2n
Don ’ t care
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D
n+2
D
tQH
OUT
tDQSQ
NOP
T3
OUT
n
tDQSCK
tRPST
D
n+3
D
OUT
n+1
Notes :
T3n
OUT
1. CA : Column address
2. BA : Bank address
3. A10=High : Enable Auto precharge
A10=Low : Disable Auto precharge
D
n+2
NOP
T4
OUT
tHZ
tRPST
D
n+3
T4n
OUT
IS43/46LR32200B
Advanced Information
27