is43lr32200b-6bl Integrated Silicon Solution, Inc., is43lr32200b-6bl Datasheet - Page 35

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is43lr32200b-6bl

Manufacturer Part Number
is43lr32200b-6bl
Description
512k X 32bits X 4banks Mobile Ddr Sdram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
Rev. 00A | Feb. 2011
Figure28 : Write to Precharge (Uninterrupting)
Figure29 : Write to Precharge (Interrupting)
Notes:
Notes:
Command
Command
Address
1. Din n = Data-In from Column n.
2. tWR is referenced from the first positive CK edge after the last data-in pair.
3. Read and Write command can be directed to different banks, in which case tWR is not required and the Read command
1. Din n = Data-In from Column n.
2. tWR is referenced from the first positive CK edge after the last data-in pair.
3. Read and Write command can be directed to different banks, in which case tWR is not required and the Read command
/CLK
Address
CLK
DQS
DQ
DM
/CLK
could be applied ealier.
could be applied ealier.
CLK
DQS
DQ
DM
WRITE
Bank a
COL n
T0
WRITE
Bank a
COL n
T0
Don ’ t care
tDQSS
(NOM)
tDQSS
(NOM)
Don’t care
NOP
T1
D
n
NOP
IN
T1
D
n
IN
n+1
D
n+1
IN
D
IN
www.issi.com
NOP
T2
NOP
n+2
T2
D
IN
n+3
D
IN
NOP
T3
tWR
- dram@issi.com
NOP
T3
PCG
T4
NOP
tWR
T4
NOP
PCG
T5
T5
IS43/46LR32200B
Advanced Information
35

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