tc58dvm92a5baj3 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5baj3 Datasheet - Page 18

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tc58dvm92a5baj3

Manufacturer Part Number
tc58dvm92a5baj3
Description
512-mbit 64m ? 8 Bits Cmos Nand E Prom Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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DEVICE OPERATION
Select page
Select page
RY
RY
CLE
CLE
ALE
ALE
Read Mode (1)
timing details and the block diagram.
Read Mode (2)
/
/
WE
WE
RE
RE
CE
BY
CE
BY
I/O
I/O
N
N
Read mode (1) is set when a 00h command is issued to the Command register. Refer to Figure 2 below for
00h
01h
M
Figure 2. Read mode (1) operation
Figure 3. Read mode (2) operation
M
M
Start-address input
Start-address input
256
M
N
N
527
527
Cell array
Cell array
Busy
Busy
18
starts on the rising edge of WE in the fourth cycle (after the
address information has been latched). The device will be in
Busy state during this transfer period.
Serial data can be output synchronously with the RE clock
from the start pointer designated in the address input cycle.
the same as that of Read mode (1). If the start pointer is to be
set after column address 256, use Read mode (2).
A data transfer operation from the cell array to the register
After the transfer period the device returns to Ready state.
The operation of the device after input of the 01h command is
TC58DVM92A5BAJ3
2010-06-16

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