tc58dvm92a5baj3 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5baj3 Datasheet - Page 6

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tc58dvm92a5baj3

Manufacturer Part Number
tc58dvm92a5baj3
Description
512-mbit 64m ? 8 Bits Cmos Nand E Prom Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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AC TEST CONDITIONS
PROGRAMMING AND ERASING CHARACTERISTICS
(Ta = -40° to 85°C, V
Vcc
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
BERASE
SYMBOL
PARAMETER
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
CC
= 2.7 V to 3.6 V)
PARAMETER
C
V
L
CC
(100 pF) + 1 TTL
CONDITION
2.7V to 3.6V
− 0.2 V, 0.2 V
V
V
6
CC
CC
3 ns
MIN
/ 2
/ 2
TYP.
300
2.5
MAX
700
3
7
TC58DVM92A5BAJ3
UNIT
ms
µ s
2010-06-16
NOTES
(1)

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