fdc6036p-f077

Manufacturer Part Numberfdc6036p-f077
DescriptionFdc6036p P-channel 1.8v Specified Powertrench? Mosfet
ManufacturerFairchild Semiconductor
fdc6036p-f077 datasheet
 


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FDC6036P
P-Channel 1.8V Specified PowerTrench
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the R
DS(ON)
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
MOSFET Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
, T
Operating and Storage Junction Temperature Range
J
stg
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJC
Package Marking and Ordering Information
.036
FDC6036P
2004 Fairchild Semiconductor Corporation
MOSFET
Features
• –5 A, –20 V. R
and thermal
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low R
DS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
4
5
6
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
7’’
January 2004
= 44 mΩ @ V
= –4.5 V
DS(ON)
GS
R
= 64 mΩ @ V
= –2.5 V
DS(ON)
GS
R
= 95 mΩ @ V
= –1.8 V
DS(ON)
GS
Bottom Drain Contact
3
2
1
Bottom Drain Contact
Ratings
Units
–20
V
±8
V
–5
A
–20
1.8
W
1.8
0.9
°C
–55 to +150
68
°C/W
1
8mm
3000 units
FDC6036P Rev C2 (W)

fdc6036p-f077 Summary of contents

  • Page 1

    ... January 2004 = 44 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON) GS Bottom Drain Contact Bottom Drain Contact Ratings Units –20 V ±8 V –5 A –20 1.8 W 1.8 0.9 °C –55 to +150 68 °C/W 1 8mm 3000 units FDC6036P Rev C2 (W) ...

  • Page 2

    ... A/µ Typ Max Units V –24 mV/°C µA –1 ±100 nA –0.7 –1.5 V 4.4 mV/° mΩ 992 pF 169 8.6 mΩ 1.7 nC 2.0 nC –1.25 A –0.7 –1 7.8 nC FDC6036P Rev C2 (W) ...

  • Page 3

    ... Pulse Test: Pulse Width < 300µs, Duty Cycle < 2. 25°C unless otherwise noted A is determined by the user's board design. θCA 60°C/W when 2 mounted on a 1in pad copper (Single Operation). b) 130°C/W when mounted on a minimum pad copper (Single Operation). FDC6036P Rev C2 (W) ...

  • Page 4

    ... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC6036P Rev C2 (W) ...

  • Page 5

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6036P Rev C2 ( 1.2 ...

  • Page 6

    ... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 130 C/W θ 0 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( θJA θ 130 °C/W θJA P(pk ( θJA Duty Cycle 100 FDC6036P Rev C2 (W) 20 1000 ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...