k4d263238m-qc60 Samsung Semiconductor, Inc., k4d263238m-qc60 Datasheet - Page 12

• Manufacturer Part Number: k4d263238m-qc60
• Description: 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

AC INPUT OPERATING CONDITIONS
K4D263238M
Recommended operating conditions Unless Otherwise Noted, T
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Note: 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
2. Refresh period is 32ms.
Parameter
ID
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
Sym-
bol
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
P
N
P
N
Burst Lenth=2
I
CKE
CKE
t
CKE
CKE
t
I
Burst, All Banks activated.
OL
OL
CC
CC
=0mA,
=0mA ,
=
=
t
t
CC
CC
V
V
V
VIH(min), CS
IL
(min).
(min) .
IH
IL
Test Condition
(max),
(max),
t
t
t
(min), CS
RC
CC
DDQ
CC
CKE
Symbol
=
=
V
V
V
of the transmitting device and must track variations in the DC level of the same
t
t
V
t
t
RC
CC
CC
RFC
IH
IL
ID
IX
t
t
CC
CC
(min), Page
(min)
0.2V
SS
(min)
=
=
t
=0V, V
RC
t
V
t
- 12 -
VIH(min),
CC
CC
IH
(min)
(min)
(min)
(min),
0.5*V
V
DD
A
REF
=0 to 65 C)
/ V
Min
0.7
DDQ
+0.35
-
DDQ
-0.2
=2.5V+
-45*
310
155
105
190
660
380
90
5
5%,
Typ
260
135
160
550
330
-50
-
-
-
-
Version
T
A
=0 to 65 C)
260
130
150
500
320
-55
80
95
128M DDR SDRAM
4
0.5*V
V
V
REF
DDQ
Max
DDQ
260
125
140
460
320
-60
-
-0.35
+0.6
Rev. 1.3 (Aug. 2001)
+0.2
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
Unit
V
V
V
V
1
2
Note
1
2