k4d263238m-qc60 Samsung Semiconductor, Inc., k4d263238m-qc60 Datasheet - Page 16

• Manufacturer Part Number: k4d263238m-qc60
• Description: 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

K4D263238M
AC CHARACTERISTICS (I)
Note :1 For normal write operation, even numbers of Din are to be written inside DRAM
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
Last data in to Read com-
mand
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
Power down exit time
Refresh interval time
Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RC
RFC
RAS
RCDRD
RCDWR
RP
RRD
WR
CDLR
CCD
MRD
XSR
PDEX
REF
DAL
1tCK+tIS
Min
200
7.8
13
15
9
4
2
4
2
2
2
1
2
6
-45*
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
1tCK+tIS
Min
200
7.8
12
14
8
4
2
4
2
2
2
1
2
6
- 16 -
-50
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
1tCK+tIS
Min
200
7.8
12
14
8
4
2
4
2
2
2
1
2
6
-55
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
128M DDR SDRAM
1tCK+tIS
Min
200
7.8
10
12
7
3
2
3
2
2
2
1
2
5
-60
Rev. 1.3 (Aug. 2001)
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
1
1