k4d263238m-qc60 Samsung Semiconductor, Inc., k4d263238m-qc60 Datasheet - Page 14

• Manufacturer Part Number: k4d263238m-qc60
• Description: 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

K4D263238M
AC CHARACTERISTICS
Simplified Timing @ BL=2, CL=3
CK cycle time
CK high level width
CK low level width
DQS out access time from CK
Output access time from CK
Data strobe edge to Dout edge
Read preamble
Read postamble
CK to valid DQS-in
DQS-In setup time
DQS-in hold time
DQS write postamble
DQS-In high level width
DQS-In low level width
Address and Control input
setup
Address and Control input hold
DQ and DM setup time to DQS
DQ and DM hold time to DQS
Clock half period
Data output hold time from
DQS
COMMAND
CK, CK
DQS
DQ
DM
CS
Parameter
READA
0
CL=3
CL=4
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
1
1
CK
CH
CL
DQSCK
AC
DQSQ
RPRE
RPST
DQSS
WPRES
WPREH
WPST
DQSH
DQSL
IS
IH
DS
DH
HP
QH
Symbol
tHP-0.45
tCHmin
tCLmin
Min
0.45
0.45
0.25
0.45
0.45
-0.7
-0.7
4.5
0.9
0.4
0.8
0.4
0.4
0.4
1.0
1.0
2
or
0
-
-
tRPRE
-45*
tAC
tCH
+0.45
Max
0.55
0.55
+0.7
+0.7
1.1
0.6
1.2
0.6
0.6
0.6
10
-
-
-
-
-
-
-
-
tCK
3
tDQSCK
tCL
Da1
tHP-0.45
tDQSQ
tCHmin
tCLmin
Min
0.45
0.45
0.25
0.45
0.45
-0.7
-0.7
5.0
0.9
0.4
0.8
0.4
0.4
0.4
1.0
1.0
or
0
-
- 14 -
tRPST
Da2
-50
4
+0.45
Max
0.55
0.55
+0.7
+0.7
1.1
0.6
1.2
0.6
0.6
0.6
10
-
-
-
-
-
-
-
-
tIS
tIH
tCHmin
tHP-0.5
tCLmin
WRITEB
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
5.5
0.9
0.4
0.4
0.4
0.4
1.1
1.1
0.5
0.5
or
0
-
5
t
WPRES
-55
tDQSS
+0.75
+0.75
Max
0.55
0.55
+0.5
1.25
1.1
0.6
0.6
0.6
0.6
10
t
-
-
-
-
-
-
-
-
WPREH
128M DDR SDRAM
tDS tDH
6
Db0
tCHmin
tHP-0.5
tCLmin
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
6.0
0.9
0.4
0.4
0.4
0.4
1.1
1.1
0.5
0.5
or
0
tDQSH
-
Db1
Rev. 1.3 (Aug. 2001)
-60
tWPST
+0.75
+0.75
Max
0.55
0.55
+0.5
1.25
1.1
0.6
0.6
0.6
0.6
10
7
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
1
1
1
Hi-Z
Hi-Z