SS8550B FAIRCHILD [Fairchild Semiconductor], SS8550B Datasheet
SS8550B
Manufacturer Part Number
SS8550B
Description
2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.SS8550B.pdf
(4 pages)
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©2002 Fairchild Semiconductor Corporation
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: I
• Collector Power Dissipation: P
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
h
V
V
V
C
f
C
CBO
EBO
T
FE
Symbol
FE1
FE2
FE3
J
STG
CBO
CEO
EBO
C
CE
BE
BE
ob
CBO
CEO
EBO
Symbol
Classification
(sat)
(sat)
(on)
Classification
h
FE2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
=1.5A
Parameter
C
=2W (T
T
85 ~ 160
C
a
=25 C)
=25 C unless otherwise noted
B
T
Parameter
a
=25 C unless otherwise noted
SS8550
I
I
I
V
V
V
V
V
I
I
V
V
f=1MHz
V
C
C
E
C
C
CB
EB
CE
CE
CE
CE
CB
CE
= -100 A, I
= -100 A, I
= -2mA, I
= -800mA, I
= -800mA, I
= -6V, I
= -35V, I
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -10V, I
= -10V, I
Test Condition
C
B
C
C
C
C
=0
E
=0
E
C
= -5mA
= -100mA
= -800mA
= -10mA
C
E
=0
=0
B
B
= -50mA
=0
=0
= -80mA
= -80mA
120 ~ 200
C
1. Emitter 2. Base 3. Collector
1
Min.
100
-40
-25
45
85
40
-6
-65 ~ 150
Ratings
-1.5
150
-40
-25
-6
1
-0.28
-0.98
-0.66
Typ.
170
160
200
80
15
160 ~ 300
TO-92
Max.
-100
-100
-0.5
-1.2
-1.0
300
D
Rev. A2, November 2002
Units
W
V
V
V
A
C
C
Units
MHz
nA
nA
pF
V
V
V
V
V
V
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SS8550B Summary of contents
Page 1
Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: I =1.5A C • Collector Power Dissipation PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collector-Base Voltage ...
Page 2
Typical Characteristics -0.5 -0.4 -0.3 -0.2 -0.1 -0.4 -0.8 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic -10000 -1000 V BE(sat) -100 V CE(sat) -10 -0.1 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter ...
Page 3
Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, November 2002 ...
Page 4
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...