DB3-DB3TG FAIRCHILD [Fairchild Semiconductor], DB3-DB3TG Datasheet
DB3-DB3TG
Manufacturer Part Number
DB3-DB3TG
Description
150mW Bi-directional Trigger Diodes
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.DB3-DB3TG.pdf
(4 pages)
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
• V
• Low break-over current
• DO-35 package (JEDEC)
• Hermetically sealed glass
• Compression bonded construction
• All external surfaces are corrosion resistant and
• RoHS compliant
• High reliability glass passivation insuring parameter stability and
• Terminal: Pure tin plated, lead free, solderable
• High temperature soldering guaranteed : 260°C/10 seconds
Absolute Maximum Ratings and Electrical Characteristics
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
terminals are readily solderable
protection against junction contamination.
per MIL-STD-202, Method 208 guaranteed
Symbol
T
BO
±V
J,
I
V
R
Δ V
I
FRM
V
P
BO
I
T
BO
B
θja
: 32V Version
BO
O
D
STG
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Dynamic Break-over Voltage
Leakage Current
Output Voltage
Power Dissipation
Repetitive Peak Forward Current, Pulse Width=20μsec
Typical Thermal Resistance, Junction to Ambient (Note1)
Junction and Storage Temperature Range
Parameter
@ V
@ I
B
*see diagram 1 Min.
=0.5V
BO
to I
@ C=22nF Min.
@ C=22nF Max.
@ C=22nF Max.
BO
F
1
=10mA Min.
(Max.) Max.
Typ.
Max.
DB3
100
28
32
36
±3
5
-40 to +125
Value
150
400
10
5
2
Color Band Denotes Cathode
DB3TG
30
32
34
±2
15
DO-35
9
September 2010
www.fairchildsemi.com
Units
°C/W
mW
μA
μA
°C
V
V
V
V
V
V
A
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DB3-DB3TG Summary of contents
Page 1
... T T Junction and Storage Temperature Range J, STG * Rating at 25°C ambient temperature unless otherwise specified. * Notes: 1. Valid provided that electrodes are kept at ambient temperature © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 Parameter @ C=22nF Min. Typ. Max. @ C=22nF Max. @ C=22nF Max =10mA Min ...
Page 2
... Typical Performance Characteristics I =10m F Diagram 1 : Test circuit Figure 2. Relative Variation of VBO versus Junction Temperature 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1. Tj(°C) © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev =0.5 Figure 1. Admissible Power Dissipation Curve 160 120 Figure 3. Repetitive Peak Pulse Current versus 100 10 ...
Page 3
... Physical Dimensions © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 DO-35 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS Auto-SPM FRFET Build it Now Global ...