m12l16161a Elite Semiconductor Memory Technology Inc., m12l16161a Datasheet - Page 11

• Manufacturer Part Number: m12l16161a
• Description: 512k X 16bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
Elite Semiconductor Memory Technology Inc.
2. Bank active & read/write are controlled by BA.
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
A10/AP
BA
0
1
0
1
0
0
1
BA
BA
X
0
1
0
1
0
1
Active & Read/Write
Both Banks
precharge
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Bank A
Bank B
Bank A
Bank B
Operation
Revision : 2.7
Publication Date : Sep. 2008
M12L16161A
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