m12l16161a Elite Semiconductor Memory Technology Inc., m12l16161a Datasheet - Page 28

• Manufacturer Part Number: m12l16161a
• Description: 512k X 16bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Elite Semiconductor Memory Technology Inc.
Revision History
Revision
0.1
0.2
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
1998.10.23
1998.12.04
1999.12.10
2000.01.26
2000.04.25
2001.02.22
2001.06.04
2001.09.07
2002.03.20
2003.12.16
2004.03.05
2005.05.10
2005.07.07
2005.10.06
2007.05.03
2007.07.20
2008.09.10
2000.11.27
2005.11.15
2007.06.11
Date
Original
Add 200MHZ
1. Delete Preliminary
2. Rename the filename
Add –5.5 Spec
Correct error typing of C1 dimension
1. P5 Number of valid output data CAS Latency 3
2. P17. P19. P21 Read Command shift right 1CLK
3. P15. P19. P20 Precharge Command shift left 1CLK
P6 modify tOH –6(2ns) & -7(2ns)
P3. P4 modify DC current
P5 modify AC parameters
1. P28 C1(Nom)=0.15mm 0.127mm
2. P28 delete symbol=ZD
Modify stand off=0.051~0.203mm
1. Correct typing error of timing (tRC; tRP;tRCD)
2. Add tRRD timing chart
Add “Pb-free” to ordering information
1. Modify I
2. Delete –5.5, -6, -8, -10 AC spec
Add 60V FBGA
Modify VFBGA 60Ball Total high spec
Delete BGA ball name of packing dimensions
Modify Pin Configuration (TOP VIEW)
Modify tRAS(min) 40ns => 30ns and tRC(min) 55ns =>
48ns
Add Y spec. into TSOPII package dimension
CC1
, I
CC2N
, I
CC3N
Description
, I
CC4
, I
CC5
spec
Revision : 2.7
Publication Date : Sep. 2008
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