m12l16161a Elite Semiconductor Memory Technology Inc., m12l16161a Datasheet - Page 21

• Manufacturer Part Number: m12l16161a
• Description: 512k X 16bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
A 1 0 / A P
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue.
Elite Semiconductor Memory Technology Inc.
C L O C K
A D D R
R A S
C A S
C K E
W E
D Q
D Q M
B A
C S
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
3.Burst stop is valid at every burst length.
AC parameter of t
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
R o w A c t i v e
0
( A - B a n k )
R A a
R A a
1
2
RDL
3
( A - B a n k )
W r i t e
.
D A a 0 D A a 1
C A a
4
5
D A a 2 D A a 3 D A a 4
6
7
B u r s t S t o p
8
t
9
B D L
H I G H
10
( A - B a n k )
W r i t e
D A b 0
C A b
11
D A b 1
12
D A b 2
13
D A b 3 D A b 4 D A b 5
14
Revision : 2.7
Publication Date : Sep. 2008
15
M12L16161A
16
* N o t e 2
17
P r e c h a r g e
( A - B a n k )
18
t
R D L
: D o n ' t C a r e
21/29
19