m12l16161a Elite Semiconductor Memory Technology Inc., m12l16161a Datasheet - Page 18

• Manufacturer Part Number: m12l16161a
• Description: 512k X 16bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Read & Write Cycle with auto Precharge @ Burst Length =4
D Q
*Note: 1.t
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
A D D R
C L = 3
C L = 2
D Q M
C K E
R A S
C A S
W E
B A
C S
(In the case of Burst Length=1 & 2 and BRSW mode)
CDL
0
Should be controlled to meet minimum t
( A - Bank )
Row Active
R a
R a
1
2
3
( B - Bank )
Row Active
R b
R b
4
Auto Precharge
( A - Bank )
Read with
C a
5
6
Q a 0
7
RAS
Q a0
Q a1 Q a 2
before internal precharge start
Auto Precharge
8
Start Point
( A - Bank)
Q a1
9
H I G H
Q a 2
Q a3
10
Q a 3
11
12
A u t o P r e c h a r g e
13
W r i t e w i t h
( B - B a n k )
D b 0
C b
D b 0
14
Revision : 2.7
Publication Date : Sep. 2008
D b 1
D b 1
15
M12L16161A
D b 2
D b 2
16
D b 3
D b 3
17
: D o n ' t C a r e
A u t o P r e c h a r g e
18
S t a r t P o i n t
( B - B a n k )
18/29
19