m12l16161a Elite Semiconductor Memory Technology Inc., m12l16161a Datasheet - Page 20

• Manufacturer Part Number: m12l16161a
• Description: 512k X 16bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

D Q
ESMT
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
*Note: 1.Burst can’t end in full page mode, so auto precharge can’t issue.
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
A D D R
C L = 3
D Q M
C L = 2
C K E
RAS
CAS
WE
B A
CS
2.About the valid DQs after burst stop, it is same as the case of RAS interrupt.
3.Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
R o w A c t i v e
( A - B a n k )
0
R A a
R A a
1
2
3
( A - B a n k )
R e a d
C A a
4
5
Q A a 0 Q A a 1
6
Q A a 0 Q A a 1
7
Q A a 2 Q A a 3 Q A a 4
B u r s t S t o p
8
Q A a 2 Q A a 3 Q A a 4
*Note2
9
H I G H
10
1
( A - B a n k )
R e a d
C A b
11
2
12
* N o t e 1
Q A b 0
13
Q A b 1
Q A b 0
14
Revision : 2.7
Publication Date : Sep. 2008
Q A b 2
Q A b 1
15
M12L16161A
Q A b 2
Q A b 3 Q A b 4 Q A b 5
16
P r e c h a r g e
( A - B a n k )
Q A b 3 Q A b 4 Q A b 5
17
18
1
: D o n ' t C a r e
20/29
19
2