FQB4N90 FAIRCHILD [Fairchild Semiconductor], FQB4N90 Datasheet
FQB4N90
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FQB4N90 Summary of contents
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... A = 25°C) C Parameter October 2001 QFET = 3 DS(on " " ! " ! " " " " " FQB4N90 / FQI4N90 Units 900 V 4.2 A 2. 570 mJ 4 4.0 V 3.13 W 140 W 1.12 W/°C -55 to +150 °C 300 °C Typ Max ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...
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Typical Characteristics Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source Voltage [V] DS Figure 1. ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature 2 10 Operation in This Area is Limited by R DS(on ...
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3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms ...
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Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...
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Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 0.20 ©2001 Fairchild Semiconductor Corporation 2 D -PAK 4.50 0.80 0.10 2.54 TYP 10.00 (8.00) (4.40) (2XR0.45) 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 0.20 0.80 0.10 ...
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Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 I -PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. B, October ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ DOME™ ...