FDP032N08_12 FAIRCHILD [Fairchild Semiconductor], FDP032N08_12 Datasheet

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FDP032N08_12

Manufacturer Part Number
FDP032N08_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDP032N08_12.pdf (8 pages)
©2012 Fairchild Semiconductor Corporation
FDP032N08 Rev. C0
*
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
R
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
D
DM
FDP032N08
N-Channel PowerTrench
75V, 235A, 3.2mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
J
L
DSS
GSS
AS
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 2.5mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
TO-220
= 10V, I
-
-
-
D
Continuous (T
Continuous (T
Continuous (T
= 75A
T
C
= 25
Parameter
Parameter
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted*
= 25
MOSFET
C
o
C
C
C)
= 25
DS(on)
= 100
= 25
o
o
o
C, Silicon Limited)
C, Silicon Limited)
C, Package Limited)
1
o
C
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
(Note 1)
(Note 2)
(Note 3)
G
FDP032N08
FDP032N08
-55 to +175
®
S
D
process that has been espe-
1995
235*
165*
62.5
±20
120
940
375
300
6.0
2.5
0.4
0.5
75
September 2012
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
o
o
W
V
V
A
A
A
A
C
C
o
C

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FDP032N08_12 Summary of contents

Page 1

FDP032N08 N-Channel PowerTrench 75V, 235A, 3.2mΩ Features • 2.5mΩ ( Typ.)@ V = 10V, I DS(on) GS • Fast switching speed • Low gate charge • High performance trench technology for extremely low R • High power and ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP032N08 FDP032N08 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics 3000 = V 15 1000 10.0 V 8.0 V 7.0 V 6.5 V 100 6.0 V 5 0.1 0.01 0.1 V ,Drain-Source Voltage[V] DS Figure 3. ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9. Maximum Safe Operating Area 1000 100 Operation in This Area 10 is Limited by ...

Page 5

FDP032N08 Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP032N08 Rev. C0 Peak Diode Recovery dv/dt Test ...

Page 7

Package Dimensions FDP032N08 Rev. C0 TO-220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ AccuPower™ FRFET AX-CAP™* Global Power Resource ...

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