FDP038AN06A0_10 FAIRCHILD [Fairchild Semiconductor], FDP038AN06A0_10 Datasheet

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FDP038AN06A0_10

Manufacturer Part Number
FDP038AN06A0_10
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2010 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench
60V, 80A, 3.8m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
(FLANGE)
D
DRAIN
GS
J
DSS
AS
D
Symbol
, T
JC
JA
DS(ON)
g
(tot) = 95nC (Typ.), V
STG
RR
= 3.5m (Typ.), V
Body Diode
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
TO-220AB
FDP SERIES
GS
GATE
GS
amb
C
= 10V
DRAIN
< 151
= 10V, I
SOURCE
o
C
= 25
o
C, V
o
D
C, V
®
= 80A
GS
MOSFET
GS
Parameter
= 10V)
T
= 10V, with R
C
= 25°C unless otherwise noted
(FLANGE)
DRAIN
JA
= 62
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
TO-262AB
FDI SERIES
SOURCE
o
C/W)
GATE
DRAIN
G
-55 to 175
Ratings
Figure 4
2.07
0.48
625
310
60
80
17
62
20
FDP038AN06A0 / FDI038AN06A0 Rev. B2
D
S
December 2010
Units
W/
o
o
C/W
C/W
mJ
o
W
A
V
V
A
A
C
o
C

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FDP038AN06A0_10 Summary of contents

Page 1

FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench 60V, 80A, 3.8m Features • 3.5m (Typ.), V = 10V, I DS(ON) GS • Q (tot) = 95nC (Typ.), V = 10V g GS • Low Miller Charge • Low Q Body Diode ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP038AN06A0 FDP038AN06A0 FDI038AN06A0 FDI038AN06A0 Electrical Characteristics Symbol Parameter Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On ...

Page 3

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE ( C Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 ...

Page 4

Typical Characteristics 2000 1000 100 OPERATION IN THIS AREA MAY BE 10 LIMITED BY r DS(ON) 1 SINGLE PULSE T = MAX RATED 0 DRAIN TO SOURCE VOLTAGE (V) ...

Page 5

Typical Characteristics 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -80 - JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 OSS DS GD 1000 C C ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit V GS ...

Page 7

PSPICE Electrical Model .SUBCKT FDP038AN06A0 rev July 04, 2002 1.5e 1.5e-9 Cin 6 8 6.1e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 ...

Page 8

SABER Electrical Model rev July 4, 2002 template FDP038AN06A0 n2,n1,n3 = m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9) dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47) m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1) m..model mstrongmod = ...

Page 9

PSPICE Thermal Model REV 23 July 4, 2002 FDP038AN06A0T CTHERM1 TH 6 6.45e-3 CTHERM2 6 5 3e-2 CTHERM3 5 4 1.4e-2 CTHERM4 4 3 1.65e-2 CTHERM5 3 2 4.85e-2 CTHERM6 2 TL 1e-1 RTHERM1 TH 6 3.24e-3 RTHERM2 6 5 ...

Page 10

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ ® Auto-SPM™ FRFET Build it Now™ ...

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