FDP150N10A FAIRCHILD [Fairchild Semiconductor], FDP150N10A Datasheet

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FDP150N10A

Manufacturer Part Number
FDP150N10A
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP150N10A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2011 Fairchild Semiconductor Corporation
FDP150N10A_F102 Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDP150N10A_F102
N-Channel PowerTrench
100V, 50A, 15mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
R
Symbol
Symbol
DS(on)
DS(on)
STG
= 12.5mΩ ( Typ.)@ V
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
D
GS
S
= 10V, I
D
T
= 50A
C
®
= 25
TO-220
MOSFET
Parameter
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
= 25
o
C)
1
C
C
= 25
= 100
o
Description
This
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
C
o
C)
o
C)
N-Channel
G
(Note 1)
(Note 2)
(Note 3)
MOSFET
D
S
FDP150N10A_F102
is
-55 to +175
produced
Ratings
84.6
0.61
100
±20
200
300
62.5
6.0
50
36
91
1.6
July 2011
using
www.fairchildsemi.com
Fairchild
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C
tm

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FDP150N10A Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FDP150N10A_F102 Rev. A1 ® MOSFET Description = 50A This N-Channel D Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... G J ≤ 100A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP150N10A_F102 Rev. A1 Package Reel Size TO-220 - unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... 1MHz ( C iss = shorted 10 C oss = rss = 0 Drain-Source Voltage [V] DS FDP150N10A_F102 Rev. A1 Figure 2. Transfer Characteristics 200 100 10 *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... 175 J 3. Single Pulse 0.01 0 Drain-Source Voltage [V] DS Figure 11. Eoss vs. Drain to Source Voltage 1.5 1.2 0.9 0.6 0.3 0 Drain to Source Voltage DS FDP150N10A_F102 Rev. A1 (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 *Notes μ 250 A D 0.5 100 150 200 Figure 10. Maximum Drain Current 60 μ ...

Page 5

... Typical Performance Characteristics 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP150N10A_F102 Rev. A1 (Continued) Figure 13. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 1.6 C/W Max. θ Duty Factor (t) θ ...

Page 6

... FDP150N10A_F102 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP150N10A_F102 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 8

... Package Dimensions FDP150N10A_F102 Rev. A1 TO-220 8 www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP150N10A_F102 Rev. A1 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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