FDPF13N50FT_12 FAIRCHILD [Fairchild Semiconductor], FDPF13N50FT_12 Datasheet

no-image

FDPF13N50FT_12

Manufacturer Part Number
FDPF13N50FT_12
Description
N-Channel MOSFET 500V, 12A, 0.54?
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDPF13N50FT_12.pdf (9 pages)
©2012 Fairchild Semiconductor Corporation
FDP13N50F / FDPF13N50FT Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP13N50F / FDPF13N50FT
N-Channel MOSFET
500V, 12A, 0.54Ω
Features
• R
• Low gate charge ( Typ. 30nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G
rss
D
= 0.42Ω ( Typ.)@ V
S
( Typ. 14.5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP Series
TO-220
GS
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
G
C
o
D
C unless otherwise noted*
= 25
S
o
C)
C
C
= 25
= 100
TO-220F
FDPF Series
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP13N50F FDPF13N50FT
FDP13N50F FDPF13N50FT
1.53
0.65
62.5
195
7.2
0.5
12
48
S
D
-55 to +150
19.5
500
±30
684
300
12
20
UniFET
62.5
0.33
7.2*
3.0
12*
48*
42
-
www.fairchildsemi.com
May 2012
switching
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

Related parts for FDPF13N50FT_12

Image
Part Number
Description
Manufacturer
Datasheet
Request R
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FSB117H
Part Number:
FSB117H
Description:
The FSB117H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
FSB147H
Part Number:
FSB147H
Description:
The FSB147H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB147H.pdf (18 pages)
FSB127H
Part Number:
FSB127H
Description:
The FSB127H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)

FDPF13N50FT_12 Summary of contents

Page 1

FDP13N50F / FDPF13N50FT N-Channel MOSFET 500V, 12A, 0.54Ω Features • 0.42Ω ( Typ.)@ V = 10V, I DS(on) GS • Low gate charge ( Typ. 30nC) • Low C ( Typ. 14.5pF) rss • Fast switching • 100% ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP13N50F FDP13N50F FDPF13N50FT FDPF13N50FT Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics 15 10.0 V 8.0 V 7 6 ,Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain Current and ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature ...

Page 5

FDP13N50F / FDPF13N50FT Rev.C1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP13N50F / FDPF13N50FT Rev.C1 Peak Diode Recovery dv/dt ...

Page 7

Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FDP13N50F / FDPF13N50FT Rev.C1 TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 www.fairchildsemi.com ...

Page 8

Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP13N50F / FDPF13N50FT Rev.C1 TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...

Related keywords