FDPF16N50T_12 FAIRCHILD [Fairchild Semiconductor], FDPF16N50T_12 Datasheet

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FDPF16N50T_12

Manufacturer Part Number
FDPF16N50T_12
Description
500V N-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2012 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
FDP16N50 / FDPF16N50 / FDPF16N50T
500V N-Channel MOSFET
Features
• 16A, 500V, R
• Low gate charge ( typical 32 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 20 pF)
G
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
S
= 0.38Ω @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP16N50
FDP16N50
1.59
200
9.6
16
64
0.63
62.5
0.5
-55 to +150
500
±30
780
300
4.5
16
20
FDPF16N50T
FDPF16N50 /
FDPF16N50 /
FDPF16N50T
UniFET
G
9.6 *
64 *
38.5
16 *
0.3
62.5
3.3
--
July 2012
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF16N50T_12 Summary of contents

Page 1

FDP16N50 / FDPF16N50 / FDPF16N50T 500V N-Channel MOSFET Features • 16A, 500V 0.38Ω @V DS(on) GS • Low gate charge ( typical 32 nC) • Low C ( typical 20 pF) rss • Fast switching • 100% avalanche ...

Page 2

Package Marking and Ordering Information Device Marking Device FDPF16N50 FDPF16N50 FDPF16N50T FDPF16N50T Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6 Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9-1. Maximum Safe Operating Area - FDP16N50 Operation in This Area ...

Page 5

Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve Figure 11-2. Transient Thermal Response Curve - FDPF16N50 FDP16N50 / FDPF16N50 / FDPF16N50T Rev. ...

Page 6

FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1 TO-220F 10.16 ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 8 ±0.20 2.54 (0.70) +0.10 0.50 2.76 ±0.20 ...

Page 9

Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1 TO-220F Potted 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...

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