FQI3P50 FAIRCHILD [Fairchild Semiconductor], FQI3P50 Datasheet

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FQI3P50

Manufacturer Part Number
FQI3P50
Description
500V P-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
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©2000 Fairchild Semiconductor International
FQB3P50 / FQI3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -2.7A, -500V, R
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI Series
I
2
-PAK
FQB3P50 / FQI3P50
Typ
--
--
--
DS(on)
-55 to +150
= 4.9
-1.71
-10.8
-500
3.13
0.68
-2.7
250
-2.7
-4.5
300
8.5
85
G
30
! ! ! !
! ! ! !
@V
Max
1.47
62.5
40
GS
QFET
QFET
QFET
QFET
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
= -10 V
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
August 2000
Rev. A, August 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQI3P50 Summary of contents

Page 1

... D FQB3P50 / FQI3P50 Units -500 V -2.7 A -1.71 A -10 250 mJ -2.7 A 8.5 mJ -4.5 V/ns 3 ...

Page 2

Elerical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

Typical Characteristics Top : -15.0 V -10.0 V -8.0 V -7.0 V -6 Bottom : -5 Drain-Source Voltage [V] DS ...

Page 4

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature Operation in This Area is Limited by R DS(on ※ ...

Page 5

-3mA -3mA Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & ...

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...

Page 7

Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 ...

Page 8

Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, August 2000 ...

Page 9

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ...

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