k9f3208w0a-tcb0 Samsung Semiconductor, Inc., k9f3208w0a-tcb0 Datasheet - Page 2

• Manufacturer Part Number: k9f3208w0a-tcb0
• Description: 4m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F3208W0A-TCB0, K9F3208W0A-TIB0
4M x 8 Bit NAND Flash Memory
FEATURES
PIN CONFIGURATION
NOTE : Connect all V
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register
- Page Program : (512 + 16)Byte
- Block Erase
- Status Register
- Random Access
- Serial Page Access : 50ns(Min.)
- Program Time
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 1Million Program/Erase Cycles
- Data Retention : 10 years
- Forward Type
Voltage Supply : 2.7V ~ 5.5V
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
Do not leave V
CLE
ALE
I/O0
I/O1
I/O2
I/O3
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
WE
WP
V
SS
SS
: (8K + 256)Byte
CC,
STANDARD TYPE
CC
: 250 s(Typ.)
44(40) TSOP (II)
V
: (512 + 16)bit x8bit
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
or V
: 10 s(Max.)
CC
Q and V
SS
disconnected.
SS
pins of each device to power supply outputs.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CE
RE
R/B
GND
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
V
CC
CC
Q
2
The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Mem-
ory with a spare 128K(131,072)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typical 250 s and an erase operation can be performed in typi-
cal 2ms on an 8K-byte block.
Data in the page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take
advantage of the K9F3208W0A extended reliability of
1,000,000 program/erase cycles by providing ECC(Error Cor-
rection Code) with real time mapping-out algorithm. The
K9F3208W0A is an optimum solution for large nonvolatile stor-
age application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility.
GENERAL DESCRIPTION
PIN DESCRIPTION
I/O0 ~ I/O7
Pin Name
V
GND
CLE
ALE
V
WE
WP
R/B
V
N.C
CE
RE
SE
CC
CC
SS
Q
Data Inputs/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Spare area Enable
Ready/Busy output
Ground Input
Power(2.7V ~ 5.5V)
Output Butter Power(2.7V ~ 5.5V)
Ground
No Connection
FLASH MEMORY
Pin Function