k9f3208w0a-tcb0 Samsung Semiconductor, Inc., k9f3208w0a-tcb0 Datasheet - Page 8

• Manufacturer Part Number: k9f3208w0a-tcb0
• Description: 4m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F3208W0A-TCB0, K9F3208W0A-TIB0
AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay(read ID)
ALE to RE Delay(Read cycle)
CLE to RE Delay
CE to RE Delay(ID read)
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)
RE Low to Status Output
CE Low to Status Output
RE High to WE Low
WE High to RE Low
RE access time(Read ID)
Device Resetting Time
NOTE :
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
Parameter
(Read/Program/Erase)
Parameter
(2)
Symbol
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WP
WC
WH
CH
DH
CS
DS
8
Symbol
t
READID
t
t
t
t
t
t
t
t
t
t
t
t
t
RSTO
CSTO
t
RHW
WHR
t
t
t
t
CLR
t
REA
RHZ
CHZ
REH
t
CRY
CEH
RST
AR1
AR2
WB
t
t
CR
RR
RP
RC
RB
IR
R
Min
10
10
25
10
20
10
50
15
0
0
0
Min
100
100
20
50
50
20
30
50
15
15
60
0
0
-
-
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
50 +tr(R/B)
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
100
100
10
35
30
20
35
45
35
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s