k9f3208w0a-tcb0 Samsung Semiconductor, Inc., k9f3208w0a-tcb0 Datasheet - Page 26

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k9f3208w0a-tcb0

Manufacturer Part Number
k9f3208w0a-tcb0
Description
4m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 1 s is required before internal circuit gets ready for any command
sequences as shown in Figure 12. The two step command sequence for program/erase provides additional software protection.
Figure 12. AC Waveforms for Power Transition
Package Dimensions
WP
WE
V
CC
~ 2.5V
10 s
High
26
FLASH MEMORY
~ 2.5V
IL

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