k9f3208w0a-tcb0 Samsung Semiconductor, Inc., k9f3208w0a-tcb0 Datasheet - Page 3

• Manufacturer Part Number: k9f3208w0a-tcb0
• Description: 4m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F3208W0A-TCB0, K9F3208W0A-TIB0
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
32M : 8K Pages
(= 512 Blocks)
V
V
CC
SS
NOTE : Column Address : Starting Address of the Register.
2nd Cycle
3rd Cycle
1st Cycle
CE
RE
WE
00h Command(Read) : Defines the starting Address of the 1st half of the Register.
01h Command(Read) : Defines the sarting Address of the 2nd half of the Register.
* A
* X can be High or Low.
* The device ignores any additional input of address cycles than reguired.
Command
8
A
A
is set to "Low" or "High" by the 00h or 01h Command.
9
0
1st half Page Register
(=256 Bytes)
- A
- A
I/O 0
21
7
A
A
A
17
0
9
512Bytes
Page Register
& High Voltage
CLE ALE WP
I/O 1
Control Logic
512Bytes
A
A
A
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
10
18
1
Register
2nd half Page Register
(=256 Bytes)
A
I/O 2
A
A
A
8
11
19
2
I/O 3
A
A
A
16Bytes
16Bytes
12
20
3
3
I/O 4
A
A
A
13
21
4
I/O 0 ~ I/O 7
2nd half Page Register & S/A
1st half Page Register & S/A
Global Buffers
I/O 5
A
(512 + 16)Byte x 8192
A
*X
I/O Buffers & Latches
14
5
8 bit
32M + 1M Bit
NAND Flash
Y-Gating
Y-Gating
ARRAY
1 Block =16 Pages
= (8K + 256) Byte
I/O 6
1 Page = 528 Bytes
1 Block = 528 B x 16 Pages
1 Device = 528Bytes x 16Pages x 512 Blocks
A
A
*X
15
6
= (8K + 256) Bytes
= 33 Mbits
I/O 7
A
A
*X
16
FLASH MEMORY
7
Output
Driver
Column Address
Row Address
(Page Address)
V
V
CC
SS
I/0 0
I/0 7
Q