k9f3208w0a-tcb0 Samsung Semiconductor, Inc., k9f3208w0a-tcb0 Datasheet - Page 6

• Manufacturer Part Number: k9f3208w0a-tcb0
• Description: 4m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F3208W0A-TCB0, K9F3208W0A-TIB0
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING
(Voltage reference to GND, K9F3208W0A-TCB0:T
NOTE : 1. Vcc and VccQ pins are separated each other.
DC AND OPERATING CHARACTERISTICS
Operating
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Supply Voltage
Supply Voltage
Supply Voltage
Current
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Sequential Read
Program
Erase
Parameter
Parameter
K9F3208W0A-TCB0
K9F3208W0A-TIB0
Symbol
I
OL
SS
I
I
I
I
I
V
V
CC
CC
CC
V
SB
SB
I
V
(R/B) V
I
LO
LI
OH
OL
IH
IL
1
2
1
2
3
Symbol
tRC=80ns, CE=V
CE=V
CE=V
V
V
I/O pins
Except I/O pins
I
I
OH
OL
V
IN
OUT
OL
V
V
CC
CC
=2.1mA
=0 to 5.5V
=-400 A
CC
SS
=0.4V
Q+0.3V which, during transitions, may overshoot to V
CONDITIONS
Q
=0 to 5.5V
IH
CC
, WP=SE=0V/V
Test Conditions
-0.2, WP=SE=0V/V
-
-
-
A
IL
=0 to 70 C, K9F3208W0A-TIB0:T
, I
Symbol
OUT
T
T
Min
(Recommended operating conditions otherwise noted.)
2.7
2.7
V
BIAS
STG
0
CC
IN
6
=0mA
CC
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
Vcc=2.7V ~ 3.6V
Typ.
Typ
0
-
-
10
10
10
10
10
-
-
-
-
-
-
-
-
-0.6 to +7.0
-10 to +125
-40 to +125
-65 to +150
Rating
V
V
CC
CC
CC
Max
0.6
0.4
20
20
20
50
Q+0.3
+2.0V for periods <20ns.
1
10
10
-
-
+0.3
A
FLASH MEMORY
=-40 to 85 C)
Max
5.5
5.5
Min
-0.3
0
3.0
3.0
2.4
8
-
-
-
-
-
-
-
-
Vcc=3.6V ~ 5.5V
Typ
15
15
25
10
10
-
-
-
-
-
-
-
-
V
Unit
V
CC
V
CC
C
C
Max
0.8
0.4
30
30
40
50
Q+0.5
1
10
10
Unit
+0.5
-
-
V
V
V
Unit
mA
mA
V
A