M58LT128HSB8ZA6 NUMONYX [Numonyx B.V], M58LT128HSB8ZA6 Datasheet - Page 52

• Manufacturer Part Number: M58LT128HSB8ZA6
• Manufacturer: NUMONYX [Numonyx B.V]

Program and erase times and endurance cycles
Table 16.
1. T
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
52/110
execution).
Erase
Program
Program/erase cycles
(per block)
Blank check
A
= –40 to 85°C; V
Parameter
(3)
Program/erase times and endurance cycles
DD
= 1.7 V to 2 V; V
Parameter block (16 Kword)
Main block (64 Kword)
Single word
Buffer (32 words)
Main Block (64
Kwords)
Bank (8 Mbits)
Main blocks
Parameter blocks
Main blocks
Parameter blocks
DDQ
= 2.7 V to 3.6 V.
Condition
Word program
Buffer enhanced
factory program
Buffer program
Buffer enhanced
factory program
Buffer program
Buffer enhanced
factory program
Buffer program
Buffer enhanced
factory program
(4)
(1) (2)
Min
(continued)
M58LT128HST, M58LT128HSB
1.28
1.28
Typ
160
160
0.4
2.5
10
80
80
16
1
4
Typical after
100kW/E
Cycles
1000 cycles
2500 cycles
Max
170
2.5
4
Unit
ms
ms
ms
ms
µs
µs
µs
µs
s
s
s
s